sot-23 plastic-encapsulate mosfets p-channel 20-v(d-s) mosfet so t -23 feature 1. gate trenchfet power mosfet 2. source 3. drain applications z load switch for portable devices z dc/dc converter marking: s 1 maximum ratings (t a =25 unless otherwise noted) parameter symbol value unit drain-source voltage v ds -20 gate-source voltage v gs 8 v continuous drain current i d -2.3 pulsed drain current i dm -10 continuous source-drain diode current i s -0.72 a maximum power dissipation p d 0.35 w thermal resistance from junction to ambient(t 5s) r ja 357 /w junction temperature t j 150 storage temperature t stg -55 ~ +150 2012-10 willas electronic corp. z SE2301
electrical characteristics (t a =25 unless otherwise noted) parameter symbol test condition min typ max units static drain-s ource b reakdown v oltage v (br) dss v gs = 0v, i d =-250a -20 v gate-source t hreshold v oltage v gs(th) v ds =v gs , i d =-250a -0.4 -1 gate-source l eakage i gss v ds =0v, v gs = 8v 100 na zero gate voltage d rain c u rrent i dss v ds =-20v, v gs =0v -1 a drain-s ource on-state r esistance r ds(on) v gs =-4.5v, i d =-2.8a 0.090 0.112 ? v gs =-2.5v, i d =-2.0a 0.110 0.142 forward t ransconductance a g fs v ds =-5v, i d =-2.8a 6.5 s dynamic b input c apacitance c iss v ds =-10v,v gs =0v,f =1mhz 405 pf output c apacitance c oss 75 reverse t ransfer c apacitance c rss 55 total gate charge q g v ds =-10v,v gs =-4.5v,i d =-3a 5.5 10 nc v ds =-10v,v gs =-2.5v,i d =-3a 3.3 6 gate-source c harge q gs 0.7 gate-drain charge q gd 1.3 gate resistance r g f =1mhz 6.0 ? turn- on delay t ime t d(on) v dd =-10v, r l =10 ?, i d =-1a, v gen =-4.5v,rg=1 ? 11 20 ns rise t ime t r 35 60 turn- off delay t ime t d(off) 30 50 fall t ime t f 10 20 drain-source b ody diode characteristics continuous s ource-d rain d iode current i s t c =25 -1.3 a pulse d iod e f orward c urrent i sm -10 body d iode v oltage v sd i s =-0.7a -0.8 -1.2 v notes : a.pulse test : pulse width < 300s, duty cycle 2%. b.guaranteed by design, not s ubject to production testing. a a 2012-10 willas electronic corp. sot-23 plastic-encapsulate mosfets SE2301
-0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -0 -2 -4 -6 -8 -10 -0 -2 -4 -6 -8 -10 0 30 60 90 120 150 -0 -2 -4 -6 -8 0 50 100 150 200 250 -0 -1 -2 -3 -4 -0 -2 -4 -6 -8 -10 -12 -14 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1e-3 -0.01 -0.1 -1 typical characteristics transfer characteristics drain current i d (a) gate to source voltage v gs (v) r ds(on) ?? v gs v gs =-4.5v v gs =-2.5v r ds(on) ?? i d on-resistance r ds(on) (m ) drain current i d (a) i d =-3.6a on-resistance r ds(on) (m ) gate to source voltage v gs (v) -0.3 -3e-3 -0.03 t a =25 pulsed t a =25 pulsed t a =25 pulsed t a =25 pulsed t a =25 pulsed output characteristics v gs = -4.0v,-3.5v,-3.0v,-2.5v v gs =-2.0v v gs =-1.5v v gs =-1.0v drain current i d (a) drain to source voltage v ds (v) i s ?? v sd source current i s (a) source to drain voltage v sd (v) 2012-10 willas electronic corp. sot-23 plastic-encapsulate mosfets SE2301
outline drawing dimensions in inches and (millimeters) sot-23 rev.d .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20) 2012-10 willas electronic corp. sot-23 plastic-encapsulate mosfets SE2301
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